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A Two-Layer Substrate Integrated Waveguide Out-of-Phase Power Divider

Qi Chen and Jun Xu
School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China
Abstract—Substrate integrated waveguides (SIWs) have been proposed and applied to develop a two-way out-ofphase power divider in this paper. This newly proposed structure shows good performance in wide frequency range from 8.6 GHz to 10.6 GHz. The proposed multilayer SIW out-of phase power divider consists of two layer of substrates of Rogers 5880 with thickness of 0.508 millimeters. The input at the upper layer is coupled to two outputs at the lower layer by a narrow metal slot located in the broad wall of waveguide. The proposed power divider shows low insertion loss in a wide passband and good outputs imbalance. In the frequency range from 8.6 GHz to 10.6 GHz, the insertion losses are between -3.32 dB and - 3.66 dB, with return losses less than -10 dB. At the same time, the magnitude differences between two outputs S21 and S31 are within 0.27 dB. The phase differences between two outputs are as low as 180 0.8    .The advantage of this structure is its good performance in wide frequency range from 8.6 GHz to 10.6 GHz. Also, the proposed structure has low profile and is easy and cheap to fabricate. The SIW structure can be integrated easily with other planar circuits such as microstrip circuits.

Index Terms—power divider, substrate integrated waveguide, multilayer

Cite: Qi Chen and Jun Xu, "A Two-Layer Substrate Integrated Waveguide Out-of-Phase Power Divider," International Journal of Electrical Energy, Vol. 1, No. 3, pp. 152-155, September 2013. doi: 10.12720/ijoee.1.3.152-155
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